elektronische bauelemente SSQ04N65J 4a, 650v, r ds(on) 3 ? n-channel enhancement mode power mosfet 17-dec-2015 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 220 j rohs compliant product a suffix of -c specifies halogen free description this advanced high voltage mosfet is designed to withstand high energy in the avalanche mode and swi tch efficiently. this new high energy device also offer s a drain-to-source diode with fast recovery time. it i s designed for high voltage, high speed switching applications such as power supplies, converters, power motor control and bridge circuits. features high current rating low r ds(on) lower capacitance lower total gate charge tighter vsd specifications specified avalanche energy absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v continuous drain current i d 4 a pulsed drain current i dm 16 a single pulse avalanche energy 1 e as 280 mj power dissipation p d 2 w maximum lead temperature for soldering purposes@1/8 from case for 5 seconds t l 260 c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating thermal resistance from junction to ambient r ja 62.5 c/ w 1 g 3 s d 2 millimeter millimeter ref. min. max . ref. min. max. a 10.010 10.350 i 4.980 5.180 b 3.735 3.935 j 3.560 3.960 c 2.590 2.890 k 4.470 4.670 d 12.060 12.460 l 1.200 1.400 e 1.170 1.370 m 8.500 8.900 f 0.710 0.910 n 2.520 2.820 g 13.400 13.800 q 0.330 0.650 h 2.540 typ.
elektronische bauelemente SSQ04N65J 4a, 650v, r ds(on) 3 ? n-channel enhancement mode power mosfet 17-dec-2015 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage bv dss 650 - - v v gs =0, i d =250 a drain-source diode forward voltage 2 v sd - - 1.5 v v gs =0, i s =4a drain-source leakage current i dss - - 25 a v ds =600v, v gs =0 gate-body leakage current 2 i gss - - 100 na v ds =0v, v gs =30v on characteristics 2 gate threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a static drain-source on-resistance r ds(on) - - 3 v gs =10v, i d =2a dynamic characteristics input capacitance c iss - 760 - output capacitance c oss - 180 - reverse transfer capacitance c rss - 20 - pf v ds =25v v gs =0 f=1mhz switching characteristics total gate charge q g - 5 - gate-source charge q gs - 2.7 - gate-drain (miller) change q gd - 2 - nc v ds =480v v gs =10v i d =4a turn-on delay time t d(on) - 20 - rise time t r - 10 - turn-off delay time t d(off) - 40 - fall time t f - 20 - ns v dd =300v v gs =10v r g =9.1 i d =4a notes: 1. e as condition: l=30mh, i l =4a, v dd =100v, r g =25 , starting t j =25c. 2. pulse test : pulse width 300 Q s, duty cycle 2%. Q
elektronische bauelemente SSQ04N65J 4a, 650v, r ds(on) 3 ? n-channel enhancement mode power mosfet 17-dec-2015 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
|
